Application Case | Penetrating Precision Detection: GEC31I Short-Wave Infrared Camera Enhances Semiconductor Yield
The trend toward higher integration in semiconductor manufacturing imposes increasingly stringent demands on imaging technology. Due to silicon's high absorptivity of visible light, visible-light imaging struggles to detect “hidden defects” such as scratches and fractures within wafers.
With the continuous advancement of machine vision inspection technology, short-wave infrared imaging technology leverages the transmission characteristics of silicon materials in the infrared wavelength range above 1100nm to achieve defect detection within silicon wafers. This approach enhances inspection efficiency and quality while reducing manufacturing costs.
MindVision's independently developed MV-GEC31I, equipped with a high-sensitivity InGaAs detector, combines semiconductor cooling, high frame rates, and easy integration. Specifically designed for low-light scientific short-wave infrared imaging and microscopic imaging, it empowers intelligent quality inspection upgrades in the semiconductor field.
High-Sensitivity SWIR Detection
Breaking through imaging barriers, transcending visible light limitations. The camera's InGaAs detector exhibits exceptional responsivity to SWIR light spanning 0.9–1.7μm. Its high quantum efficiency (≥70%@1.55μm) and sensitivity (≥0.8A/W) deliver outstanding photoelectric conversion efficiency in the short-wave infrared spectrum, enabling effective detection of invisible defects such as internal cracks, micro-scratches, and metal line oxidation within wafers.
Stable imaging under extreme conditions
Semiconductor cooling achieves a 20-degree temperature difference in the cooling environment. This significantly reduces thermal noise and prevents high temperatures from masking image noise caused by minute defects in the semiconductor.
Black level correction ensures excellent image uniformity. This guarantees consistent and reliable measurement results across the entire field of view.
Meet the demands of high-efficiency production lines
At full resolution of 640×512, it achieves a detection speed of 354fps, matching the high-speed transfer cycles of semiconductor production lines. By configuring the Region of Interest (ROI) to flexibly capture images of key areas, frame rates can be further enhanced while reducing data transmission volume, meeting the dual demands of high precision and high speed.
Application Cases
Short-wave infrared (SWIR) imaging offers high contrast advantages, enabling the detection of minute features on targets. It provides an efficient solution for internal defect detection and crack inspection on semiconductor wafers.
Product Specifications
MV-GEC31I | |
Product Name | Infrared camera |
Sensor Type | InGaAs |
Pixel size | 15umx15um |
Exposure method | Frame exposure |
Effective pixels | 300,000 |
Sensitivity | ≥0.8A/W |
Resolution@Frame Rate | 640x512 MAX@354fps |
Heat dissipation method | TEC semiconductor cooling, capable of achieving a 20-degree temperature difference in the cooling environment. |
Application Industries
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