Application Case | Seeing the “Invisible” Defects: GEC405U UV Camera in Wafer Fluorescence Inspection

The continuous miniaturization of chip feature sizes and the increasing density of electronic components make wafers more susceptible to various microscopic cracks during manufacturing processes such as handling and dicing. These defects lie beyond the observational limits of the human eye and conventional cameras, while UV cameras specialize in addressing “invisible latent issues.”

Fluorescent flaw detection technology converts “invisible defects” into “visible fluorescent signals.” By infiltrating fluorescent penetrant into defects, these flaws emit visible fluorescence when excited by ultraviolet light at specific wavelengths (e.g., 365nm). Ultraviolet cameras capture these fluorescent signals, enabling defect localization and visualization against dark backgrounds.

MindVision's independently developed MV-GEC405U ultraviolet industrial camera delivers a complete vision solution—from precise fluorescence signal capture to reliable system deployment—making it the ideal choice for achieving efficient, stable quality inspection.

The camera possesses exceptional low-light detection capabilities. Leveraging its inherent high sensitivity (>40V/lux*s@HCG) and high signal-to-noise ratio (>47dB@LCG), it efficiently captures faint fluorescence excited by ultraviolet light and converts it into images with pure backgrounds and high contrast. This ensures detection accuracy and reliability.

4-megapixel (2048×2048) high resolution provides the pixel foundation for identifying micron-level defects; supports 12-bit lossless format output with 4096 grayscale levels, enabling detection of minute brightness variations in fluorescence signals and delivering richer data for detection algorithms.

Unique packet retransmission technology ensures stable and reliable data transmission within 100 meters, meeting the continuous operation demands of high-cycle production lines. Supports external triggering and flash synchronization (fully optically isolated) to achieve millisecond-level precise exposure, eliminating electrical interference.